Active matrix OLED display with normally-on thin-film transistors

ABSTRACT

A method for forming a pixel circuit includes forming transistors on a substrate; forming a passivation layer over the transistors; forming a contact hole to a source of a transistor; forming a transparent conductor that forms a contact in the contact hole and a resistor to control pixel current; and forming an organic light emitting diode (OLED) with an anode connecting to the resistor.

BACKGROUND Technical Field

The present invention generally relates to display circuits, and moreparticularly to a pixel circuit having a pixel current control resistorand a capacitor/diode stage.

Description of the Related Art

Currently, low-temperature poly-silicon (LTPS) is a dominant thin-filmtransistor (TFT) technology employed in display backplanes of portableand handheld electronic devices (and almost exclusively for cellphones), due to higher performance which permits relatively lower powerconsumption and also scalability to lower dimensions needed for highdisplay resolutions. However, LTPS is significantly more expensive thanamorphous Si (a-Si or a-Si:H) and also requires process temperatures(e.g., 400-600° C.) which are too high for low-cost glass or plasticsubstrates. While LTPS can be prepared essentially at room-temperature,given short laser pulses (˜10-50 ns) used for crystallization and therapid dissipation of the locally generated heat, the thin filmtransistor (TFT) fabrication process still needs high temperatures toensure sufficient TFT performance and gate dielectric reliability.

In addition, while LTPS TFTs are more stable than a-Si:H TFTs, they arestill less stable than Si VLSI devices (particularly n-channel deviceswhich suffer from floating body/kink effects in addition to gatedielectric reliability issues). The device-to-device variation ofthreshold voltage requires circuit compensation techniques that reducethe display resolution due to the additional LTPS TFTs used in thepixel.

SUMMARY

In accordance with an embodiment of the present invention, a method forforming a pixel circuit includes forming transistors on a substrate;forming a passivation layer over the transistors; forming a contact holeto a source of a transistor; forming a transparent conductor that formsa contact in the contact hole and a resistor to control pixel current;and forming an organic light emitting diode (OLED) with an anodeconnecting to the resistor.

In accordance with another embodiment of the present invention, a methodfor forming a pixel circuit includes forming heterojunction field-effecttransistors (HJFETs) on a substrate using low temperature polysilicon;forming a passivation layer over the HJFETs; forming a contact hole to asource of a HJFET; forming a transparent conductor that forms a contactin the contact hole and a resistor to control pixel current; and formingan organic light emitting diode (OLED) with an anode connecting to theresistor.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a schematic diagram showing a pixel circuit in accordance withone embodiment of the present invention;

FIG. 2A is a plot showing drain current (A) (logarithm) versus gatevoltage (V) for different drain voltages with a resistor R having avalue of 0 Ohms (i.e., no resistor), in accordance with one embodiment;

FIG. 2B is a plot showing drain current (A) (logarithm) versus gatevoltage (V) for different drain voltages with a resistor R having avalue of 5 MOhms in accordance with another embodiment;

FIG. 2C is a plot showing drain current (microA) versus gate voltage (V)for different drain voltages with a resistor R having a value of 5 MOhmsin accordance with another embodiment;

FIG. 3 is a simulated timing diagram for the pixel circuit of FIG. 1showing a relationship between V_(data) and I_(pixel) in accordance withone embodiment;

FIG. 4 is a cross-sectional view showing a heterojunction field-effecttransistor connected to an organic light emitting diode (OLED) by atransparent conductor that forms a resistor using a bilayer of materialsin accordance with an embodiment of the present invention;

FIG. 5 is a plot showing contact resistance (Ohms) versus dilution ratio(%) between oxygen and argon and showing dependence of contactresistance on the dilution ratio to control a value of the resistor inaccordance with an embodiment of the present invention;

FIG. 6 is a cross-sectional view showing a liner forming the resistor ina vertical resistor stack configuration in accordance with an embodimentof the present invention;

FIG. 7 is a cross-sectional view showing a plot of current density in(microA/2×2 microns) versus voltage (V) for a vertical stack forming theresistor in a vertical resistor configuration in accordance with anembodiment of the present invention;

FIG. 8 is a cross-sectional view showing a bridge forming the resistorin a lateral resistor configuration in accordance with an embodiment ofthe present invention;

FIG. 9 is a cross-sectional view showing another bridge forming theresistor in a lateral resistor configuration in accordance with anembodiment of the present invention;

FIG. 10 is a schematic diagram showing a cross-over pixel array circuitin accordance with an embodiment of the present invention;

FIG. 11 is a schematic diagram showing a cross-over pixel array circuitwhere a capacitor/diode stage is shared in each row in accordance withanother embodiment of the present invention.

DETAILED DESCRIPTION

In accordance with aspects of the present invention, active-matrixorganic light-emitting diode (AMOLED) pixel circuits are disclosed. Inone embodiment, each pixel circuit can include a switching junctionfield-effect transistor (JFET), a driver JFET, a storage capacitor, adirect current (DC) level-shifting diode/capacitor pair or stage and asubstantially linear resistor connected between the driver JFET and theOLED. The diode can be implemented as a diode-connected JFET, e.g.,using the gate terminal of the JFET as the first terminal (anode) of thediode, and using either or both the source and drain terminals of theJFET as the second terminal (cathode) of the diode. The pixel circuitcan have the resistor implemented by configuring a contact resistance ofa via contact made to the OLED anode. In another embodiment, JFETs areheterojunction field-effect transistor (HJFET) devices includinghydrogenated Si based contacts on low-temperature poly-Si (LTPS).

In accordance with the present embodiments, the manufacturing cost andcapital equipment cost is significantly reduced compared to conventionalLTPS processes. The number of circuit elements employed in the pixelcircuit of the AMOLED pixel is reduced, and therefore, the displayresolution is improved as compared to conventional LTPS processes. Thenumber of signal/data lines employed in the pixel circuit of the AMOLEDpixel is reduced. Therefore, the display resolution is improved, and thecomplexity of the driving scheme (and therefore controller requirements)are reduced as compared to conventional LTPS processes. The number ofmask steps is also reduced. The process temperature for forming theAMOLED pixel is reduced from 400-600° C. to about 200° C. and below. Inaddition, the use of low cost and/or flexible substrates such as plasticand conventional glass is made possible without compromising the deviceperformance and system-level performance.

In useful embodiments, device and system-level performance is enhanced(for a given power consumption), or the power consumption is reduced(for a given system performance), compared to the conventional LTPSprocesses. This is due to aspects such as better HJFET devicecharacteristics, including steeper subthreshold characteristics, amongothers.

The heterojunction field-effect transistor (HJFET), leverages thelow-cost large-area advantages of amorphous Si and the higherperformance of LTPS. The HJFET devices are comprised of amorphousSi-based contacts on LTPS substrates and have the following advantagesover conventional LTPS TFTs: lower process temperature of 200° C. orbelow, higher TFT stability, steeper subthreshold characteristics,immunity to floating-body effects, lower noise, good uniformity,significant reduction in the fabrication cost/capital equipment cost byeliminating the expensive and/or high-temperature steps such asion-implantation, doping activation, high-quality gate dielectricdeposition, and enabling the use of low-cost and flexible substrates dueto the low temperature fabrication process.

In applications such as cell phones and other portable devices, whichare composed of various system components, it may be desirable forpractical purposes that the replacement of the conventional TFTs withthe HJFETs employ minimal or no change to the other system components orthe overall system design conventionally used in such applications. Insuch cases, to take full advantage of the HJFET device and processbenefits, two issues may need to be addressed in particular. Theseissues can include: since HJFET is a normally-on device, theconventional implementation of the pixel circuit does not permit sharingof a local common ground of the pixel with a global common ground sharedby various other circuit and system components, and given the small sizeof the OLED in high-resolution displays, the drive current of the driverHJFET needs to be suppressed over the desired programming voltage rangewithout compromising the switching performance of the switching HJFETs,which are fabricated monolithically. These issues are addressed inaccordance with the present embodiments. Note that normally-off HJFETsare possible but are more complicated and have a lower drive current.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, an AMOLED pixel circuit 10is shown in accordance with one illustrative embodiment. The circuit 10includes a switching junction field-effect transistor (JFET) M1, adriver JFET M2, a storage capacitor C_(S), a DC level-shifting diodeD1/capacitor C1 pair or stage and a substantially linear resistor Rconnected between the driver JFET M2 and an organic light emitting diodeOLED. The storage capacitor C_(S) and the driver JFET M2 are coupled tosupply voltage (V_(dd)).

A DC level of a V_(select) signal on the V_(select) line is downshiftedby the C1/D1 stage (which can include components in addition to orinstead of the capacitor/diode pair), such that the lower level ofV_(select) is below a pinch off voltage (e.g., <−2V) and an upper levelof V_(select)≤ground (gnd). Therefore, M1 can be switched on/offproperly with V_(select) above ground (gnd). The drain and source of M1may each have a similar or essentially identical structure, and theparticular designation as to whether such a terminal is a drain or asource follows the usual circuit conventions well known to those ofordinary skill in the art. For example, if the value of V_(data) in agiven frame time is increased with respect to that in the previous frametime, when M1 is selected the source/drain terminal of M1, which isconnected to V_(data), will be at a higher voltage than the othersource/drain terminal of M1 which is connected to the gate of M2.Therefore, the source/drain terminal connected to V_(data) will functionas a drain terminal, and the source/drain terminal connected to the gateof M2 will function as a source terminal.

The diode D1 can be implemented as a diode-connected JFET, e.g., usingthe gate terminal of the JFET as the first terminal (anode) of the diodeD1, and using either or both the source and drain terminals of the JFETas the second terminal (cathode) of the diode D1. In this way, the diodeD1 can be fabricated concurrently with JFETs M1 and M2.

The OLED is connected to a source of M2, and a threshold voltage of theOLED is chosen to be larger than an absolute value of a pinch-offvoltage of M2. Therefore, when a V_(data) signal is 0, the pixelcurrent, I_(pixel)=0, and the pixel circuit 10 operates properly withV_(data) above ground (gnd).

The pixel circuit 10 solves a problem in conventional pixel circuits,which includes that negative voltages must be used for V_(data) andV_(select) with respect to the local ground since the HJFETs arenormally-on devices. This means the local ground (gnd) of the backplanecannot be connected to a global ground where all the other local grounds(of various system components, e.g., in a cell phone) are connected.This is solved in accordance with the present embodiments by providingthe DC level of the V_(select) signal which is downshifted by the C1/D1stage such that the lower level of V_(select) is below the pinch offvoltage and the upper level of V_(select)≤ground (gnd). Therefore, M1can be switched on/off properly with V_(select) above ground (gnd). Thethreshold voltage of the OLED is chosen to be larger than the absolutevalue of a pinch-off voltage of M2. Therefore, when the V_(data) signalis 0, the pixel current, I_(pixel)=0, and the pixel circuit 10 operatesproperly with V_(data) above ground (gnd).

Off-the-shelf column driver chips need a 2-3 voltage span forprogramming grayscale levels (e.g., 256) in OLED brightness. Therefore,the operation voltage range of M2 needs to be increased without (i)excessive current flow into the OLED and (ii) compromising switchingperformance of M1.

In accordance with aspects of the present invention, a relatively largeresistance R (compared to the channel resistance of M2) is connected tothe source of M2. As a result the pixel current (I_(pixel)) is limitedto a desired range. The V_(dd) dependence of I_(pixel) is eliminated, sono resistive loss compensation is needed. Such a resistance can beimplemented with minimal modification of the backplane fabricationprocess. Efforts taken to reduce the OLED threshold voltage inconventional pixels (e.g., high-quality indium tin oxide (ITO)deposition, work function adjustment of ITO by O₂ plasma or UV ozonetreatment) may no longer be needed.

The number of transistors and signals are reduced, which enables higherimage resolution (e.g., a diode can be implemented as a HJFET with onedrain/source, thus occupying smaller area than an HJFET). The circuit 10takes advantage of all the device, process and cost advantages of theHJFET fabrication.

In one illustrative example, current limits on the OLED can include thefollowing. OLED area can be ˜20 μm×˜20 μm. A fill-factor (OLED/subpixelarea ratio)=50% with polarizer loss of about 50% and all otherbrightness losses about 50%. Subpixels include red, green and blue (RGB)(3 colors). A maximum pixel brightness is ˜500 Cd/m² and the OLEDluminance efficiency is about 10 Cd/A. In accordance with the circuit10, the maximum pixel current=maximum OLED current=500 (Cd/m²)/(10(Cd/A)×(20 μm)²×2×2×2×3)=500 nA. The maximum pixel current of aconventional circuit using an HJFET driver without a control resistorwould be ˜1000× higher than this value.

The pixel current may be reduced by increasing the channel sheetresistance of M2; however, if M1 and M2 use the same channel material,this will compromise the switching performance of M1. Using differentchannel materials, different gate stacks, etc. for M1 and M2 willincrease the number of masks (and may also complicate the process) andtherefore not be cost-effective and/or practical. In principle, M1 andM2 may be implemented with a wide channel length and width, respectively(e.g., W/L=2 μm/30 μm and 30 μm/2 μm) but this may not be practical dueto area constraints.

In accordance with aspects of the present invention, the resistance R isconnected to the source of M2 and limits the current I_(pixel) to thedesired range. The resistance R at the source of M2 can limit the pixelcurrent I_(pixel). For example: V_(p)≈−2.5V, W/L=2.5, R=5MΩ), whereV_(p) is pinch off voltage. So far as the drain voltage V_(D) is highenough to ensure M2 is in saturation (V_(D)>˜2.5V in this example), thedrain current (I_(D)) will have no dependence on the drain voltage:

I_(D)=I_(SS)[1−(V_(GS)−RI_(D))/V_(p)]²≈(V_(GS)−V_(p))/R, where V_(GS) isthe gate to source voltage of M2 and I_(ss) is the drain saturationcurrent. Therefore, the pixel current I_(pixel) becomes independent ofV_(dd) and no compensation will be needed for resistive loss on theV_(dd) line. M2 is coupled to the supply voltage V_(dd) and the pixelcurrent I_(pixel) flows through M2, R and the OLED. The resistor Rlimits the pixel current I_(pixel) to a desired range, and the supplyvoltage V_(dd) biases M2 within a saturation regime so that supplyvoltage dependence of the pixel current I_(pixel) is reduced oreliminated.

Referring to FIGS. 2A-2C, plots of drain current versus gate voltage forM2 are illustratively depicted to show the stability and performance ofthe pixel circuit 10. In FIG. 2A, the log of drain current (A) isplotted versus gate voltage (V) for a plurality of drain voltages(V_(D)) of M2 where R is 0 Ohms (no resistor). In plot 20, V_(D) is0.1V. In plot 22, V_(D) is 0.5V. In plot 24, V_(D) is 0.9V. In plot 26,V_(D) is 1.3V. In plot 28, V_(D) is 1.7V. In preferred embodiments, M1is fabricated using the same process as M2, and therefore M1 has thesame characteristics as M2 when R is 0 Ohms, as plotted in FIG. 2A. Thesteep slope of the drain current (I_(D)) at the gate voltage between −2and −3V provides the improved switching performance for M1 and addressesconcerns for conventional devices. Also, the high drive current (I_(D)at the gate voltage between −2 and 0V) is desirable for the goodswitching performance of M1. However, when R is 0 Ohms, the drivecurrent (in the saturation regime) may be too high for driving an OLED.

In FIG. 2B, drain current (A) is plotted on a logarithmic scale versusgate voltage (V) for a plurality of drain voltages (V_(D)) of M2 where Ris 5 MOhms. In plot 30, V_(D) is 0.1V. In plot 32, V_(D) is 0.5V. Inplot 34, V_(D) is 0.9V. In plot 36, V_(D) is 1.3V. In plot 38, V_(D) is1.7V. In plot 40, V_(D) is 2.1V. In plot 42, V_(D) is 2.5V. In plot 44,V_(D) is 2.9V.

In FIG. 2C, drain current (microA) is replotted on a linear scale versusgate voltage (V) for a plurality of drain voltages (V_(D)) of M2 where Ris 5 MOhms. In plot 30, V_(D) is 0.1V. In plot 32, V_(D) is 0.5V. Inplot 34, V_(D) is 0.9V. In plot 36, V_(D) is 1.3V. In plot 38, V_(D) is1.7V. In plot 40, V_(D) is 2.1V. In plot 42, V_(D) is 2.5V. In plot 44,V_(D) is 2.9V.

In all instances, the gate voltage transitions are well-defined andcorrelate well despite changes in the drain voltage V_(D), so far asV_(D) is large enough to ensure M2 is in saturation. This supports thatthe pixel current I_(pixel) becomes independent of V_(dd), and nocompensation is needed for resistive loss on the V_(dd) line. Also, whenR is 5 MOhms, the drive current is reduced by ˜1000 times compared towhen R is 0 Ohms, as desired for driving an OLED.

Referring to FIG. 3, a timing diagram of an HSPICE™ simulation showsrelationships between V_(select), V_(G,M1) (gate voltage of M1),V_(data) and I_(pixel) in the pixel circuit 10. Note that the frame-timeused was 640 microseconds instead of 16 milliseconds for betterillustration of the waveforms. According to the simulation I_(pixel)tracks V_(data) very well.

Referring to FIG. 4, a cross-sectional view of a portion 100 of a pixelincluding a driver heterojunction field-effect transistor (HJFET) 130and an OLED 136 is shown in accordance with one embodiment. The portion100 includes a substrate 102 that can be consistent with LTPS(low-temperature polysilicon) processing, which can include an insulatoror buried insulator material. The substrate 102 can include glass or aplastic material including but not limited to a flexible material. Achannel region 106 is formed on and patterned on the substrate 102. Thechannel region 106 can include an N-type material, such as an N-dopedsilicon (Si). The channel region 106 can include a monocrystalline orpolycrystalline material structures. The channel region 106 preferablyincludes low-temperature poly-silicon (LTPS). While an N-type materialis described, one skilled in the art would understand the P-typematerials may also be employed.

A gate stack is formed, which may include an intrinsic hydrogenatedamorphous Si (i a-Si:H) layer 108, an amorphous p+Si layer (p+a-Si:Hlayer) 110, a metal layer 112 and a dielectric cap 114. The i a-Si:H/p⁺a-Si:H stack forms a heterojunction on the N-doped channel material,e.g., LTPS. The a-Si:H layers and/or the dielectric cap used in the gatestack can be formed using plasma enhanced chemical vapor deposition(PECVD) at a temperature of equal to or less than about 200 degrees C.Spacers 126 are formed on the gate stack. The formation of the spacers126 may also result in the formation of the dielectric spacers 107 onthe ends of the channel region 106. Dielectric spacers 107 are of nosignificance with respect to the operation of the HJFET 130.

Source/drain (S/D) regions 116 are formed on the channel region 106adjacent to the gate stack. The S/D regions 116 can include n+hydrogenated crystalline Si (c-Si:H). The n⁺ c-Si:H of the S/D regions116 can be formed using PECVD at a temperature of equal to or less thanabout 200 degrees C. In one example, n⁺ hydrogenated Si (n⁺ Si:H) isdeposited from a mixture of SiH₄, PH₃ and H₂, such that [H₂]/[SiH₄]>5,resulting in epitaxial growth, e.g., n⁺ c-Si:H growth on the exposedsurfaces of the N-type Si substrate 106, and a-Si:H growth on all theother surfaces, including the insulating substrate 102, spacers 126 and107, and the dielectric cap 114. The n⁺ a-Si:H portion of the n⁺ Si:Hlayer is then selectively etched, e.g., using an in-situ H₂ plasma,leaving behind the n⁺ c-Si:H. Note that there are no lightly doped drain(LDD) regions next to the S/D regions 116, which have been omitted. Asilicide or metal contact layer(s) 118 are formed on the S/D regions116. The HJFET 130 formed using this exemplary process is configured asa normally-ON thin film transistor (TFT) by choosing a channel regionthickness (t_(Si)) and doping concentration (N_(D)) that results in anegative pinch-off voltage (V_(p)). In one example, t_(Si)=50 nm (Sithickness) and N_(D)=3×10¹⁸ cm⁻³ resulting in V_(p)≈−2.5V. Otherparameters are also contemplated.

A passivation layer 104 is formed over the driver HJFET 130 andpatterned to form contact holes. A transparent conductor layer or metallayer forms an OLED anode 132, which is formed in the contact hole. Thetransparent conductor layer or OLED anode 132 can include indium tinoxide (ITO) or other transparent conductive materials. The transparentconductor layer 132 is employed to form the resistance R. The resistanceR can be obtained, e.g., by deliberately increasing a specific contactresistance between the OLED anode 132 and the source/drain metal orsilicide 118.

In one example, the ITO of layer 132 is deposited as a bi-layer, a firstlayer 126 is intended to deliberately increase the contact resistance(e.g., by having a higher oxygen content), and a second layer 128 isdeposited under usual conditions.

Referring to FIG. 5, a plot of contact resistance (Ohms) versus[O₂]/[Ar] dilution ratio (%) is shown providing experimentalverification for the conditioning of layer 126 to provide adjustment toR. Specific contact resistance between ITO of layer 126 and Cr (layer118) was measured versus the [O₂]/[Ar] ratio during ITO sputtering,showing that a contact resistance of a few MΩ can be obtained for acontact area of 2 μm×2 μm by increasing the ratio from 0.1% (typical) toabout 10%. Other conditions used for ITO deposition included pressure:˜4 mtorr, RF power: ˜0.5 W/cm², and target-to-substrate gap: 3-4 inches.In other examples, deviating these conditions can also be employed toincrease (or decrease) contact resistance, as needed.

Referring to again to FIG. 4, the process continues with the formationof edge passivation 120. Organic layers 122 are deposited to form theOLED 136. An OLED cathode layer 124 is formed. The OLED cathode layer124 is connected to a global ground and is not limited to beingconnected to local grounds in accordance with the present embodiments.

The resistance R may be implemented using other methods, materials andstructures, e.g., vertical or lateral (geometrical) resistance can beemployed. Such methods can include the use of doped a-Si:H layers. Insome embodiments, the same a-Si:H layers used for the HJFET process canbe employed. Some or part of the patterning/metallization process cancombined with/or performed in parallel with the backplane process.

One illustrative formation method includes forming heterojunctionfield-effect transistors (HJFET) on a substrate using low temperaturepolysilicon technology, forming a passivation layer over the HJFETs andforming a contact hole to a source of a HJFET. A transparent conductoris deposited to form a contact in the contact hole and to form aresistor to control pixel current. An organic light emitting diode(OLED) is formed with an anode connecting to the resistor. Othercomponents can be formed concurrently, e.g., including diodes,transistors, capacitors, etc. The resistor can be formed as a bilayer, aliner in a contact hole, a vertical stack of materials, a bridge formedin a lateral break in the transparent conductor or metal layer whichforms or is connected to the OLED anode, etc.

Referring to FIG. 6, a liner 140 is formed in a contact hole in thepassivation layer 104 to contact the silicide, metal (e.g., Cr) or ITOof layer 118. The liner 140 can include a metal, ITO or other materialto provide the resistance R. A transparent conductor 142 (e.g., 128) canbe formed over the lines 140.

Referring to FIG. 7, an experimental example shows a plot of currentdensity is microA) versus voltage (V) for a Cr/p^(+ a-Si:H ()20 nm)/Crvertical stack 141 that can implement a ˜2.5MΩ resistance in a 2 μm×2 μmarea, with good linearity and negligible photoconductivity (the latternot being shown in the plot). The vertical stack 141 can be employed asthe layer 118, liner 140 and layer 142 in FIG. 6. Additional layers mayalso be included in the vertical stack. Other structures and methods mayalso be employed to provide R.

Referring to FIG. 8, lateral structures can also be implemented toprovide resistance R. In one useful embodiment, n⁺ a-Si:H can beemployed as a bridge 144 which has a sheet resistance of a few MΩ/□ at10-20 nm in thickness. Other materials can also be employed. The bridge144 is suitable for geometries on the order of about 2 μm in width andlength. The bridge 144 is formed on a dielectric or substrate 145 beforea metal or ITO 146 is formed. The anode 132 would include a break in themetal or ITO 146, which is bridged by the bridge 144 to provide theneeded resistance.

Referring to FIG. 9, another lateral structures can also be implementedto provide resistance R. In one useful embodiment, n⁺ a-Si:H can beemployed as a bridge 148 which has a sheet resistance of a few MΩ/□ at10-20 nm in thickness. Other materials can also be employed. The bridge148 is suitable for geometries on the order of about 2 m in width andlength. The bridge 148 is formed on a dielectric or substrate 145 aftera metal or ITO 146 is formed. The anode 132 would include a break in themetal or ITO 146, which is bridged by the bridge 148 to provide theneeded resistance.

It will be appreciated by those skilled in the art that the providedexamples are not exhaustive and that other geometries, materials ormethods may be used to implement R. In the implementation methods shown,minimal changes in the process flow for forming HJFET structures isprovided.

Referring to FIG. 10, the pixel circuits 10 can be incorporated into anactive matrix array 200. The active matrix array 200 includes selectlines (Y) 202 connected to a row or gate driver circuit 204 at aperiphery of the array 200. The active matrix array 200 includes datalines (X) 206 coupled to a column driver circuit 208 at a periphery ofthe array 200. Pixel circuits 10 are selectively coupled to the selectlines 202 and data lines 206 to activate the pixel circuits 10 to drivepixels (e.g., RBG subpixels) to generate an image for a display device.

Referring to FIG. 11, in another embodiment, where narrow bezel (edge)is not critical, C1 and D1 can be moved to a gate driver side of anarray 220 (panel) to enable further reduction of pixel size. Note largerC1 and D1 are employed to drive all gates in a row rather than just asingle gate. In one embodiment, the V_(dd) line can be connected to acolumn driver 218, a row (gate) driver 214, or another power supply (notshown). The grounds may be connected to the OLED cathode which can beblanket deposited in the array 220 (e.g., commonly connect to multiplepixel circuits to provide a global ground).

The pixel circuits 10′ can be incorporated into the active matrix array220 with the remaining components. The active matrix array 220 includesselect lines (Sel1-Sel3)) connected to the row or gate driver circuit214 at a periphery of the array 220. The active matrix array 220includes data lines (Data1-Data3) coupled to the column driver circuit218 at a periphery of the array 220. Pixel circuits 10′ are selectivelycoupled to the select lines and data lines to activate the pixelcircuits 10′ to drive pixels (e.g., RBG subpixels) to generate an imagefor a display device.

Having described preferred embodiments for active matrix OLED displaywith normally-on thin-film transistors (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A method for forming a pixel circuit, comprising:forming a heterojunction field effect thin film switching transistor onthe substrate, wherein the gate of the switching transistor iselectrically connected between a capacitor and a diode, wherein thediode is electrically connected between the capacitor and a groundplane; forming a heterojunction field effect thin film driver transistoron the substrate, wherein the channel of the heterojunction field effectthin film switching transistor and the channel of the heterojunctionfield effect thin film driver transistor are made of the same material,and the gate of the heterojunction field effect thin film drivertransistor is electrically connected to the heterojunction field effectthin film switching transistor; forming a passivation layer over thedriver transistor; forming a contact hole to a source/drain of thedriver transistor; forming a transparent conductor within the contacthole that forms a resistor connected to the source/drain to controlpixel current, wherein the resistor has a resistance greater than thechannel resistance of the heterojunction field effect thin film drivertransistor; and forming an organic light emitting diode (OLED) with ananode corresponding to the resistor, the OLED including an organic layerdisposed over the anode, and a cathode disposed over the organic layer,wherein the OLED is electrically connected to the source/drain of theheterojunction field effect thin film driver transistor through theresistor, and wherein the OLED is electrically connected to the sameground plane as the diode.
 2. The method as recited in claim 1, whereinthe transparent conductor includes a bilayer including a high resistancelayer formed using a dilution ratio of formation gases.
 3. The method asrecited in claim 1, wherein the transparent conductor is formed on aliner in the contact hole.
 4. The method as recited in claim 3, whereinthe liner includes a vertical stack of materials.
 5. The method asrecited in claim 1, wherein the transparent conductor is formed with alateral break and a bridge is formed in the lateral break to provide theresistor.
 6. The method as recited in claim 1, wherein theheterojunction field effect thin film switching transistor and theheterojunction field effect thin film driver transistor are both formedusing low temperature polysilicon (LTPS) material.
 7. The method asrecited in claim 6, wherein the heterojunction field effect thin filmswitching transistor and the heterojunction field effect thin filmdriver transistor both include hydrogenated silicon-based contacts.
 8. Amethod for forming a pixel circuit, comprising: forming a capacitor anda diode on a substrate; forming a switching heterojunction field-effecttransistor (HJFET) on the substrate, wherein the gate of the switchingtransistor is electrically connected between a capacitor and a diode,wherein the diode is electrically connected between the capacitor and aground plane; forming, using low temperature polysilicon material, adriver HJFET on the substrate, wherein the channel of the heterojunctionfield effect thin film switching transistor and the channel of theheterojunction field effect thin film driver transistor are made of thesame material, and the gate of the heterojunction field effect thin filmdriver transistor is electrically connected to the heterojunction fieldeffect thin film switching transistor; forming a passivation layer overthe driver HJFET; forming a contact hole to a source/drain of the driverHJFET; forming a transparent conductor within the contact hole thatforms a resistor connected to the source/drain to control pixel current,wherein the resistor has a resistance greater than the channelresistance of the heterojunction field effect thin film drivertransistor; and forming an organic light emitting diode (OLED) with ananode corresponding to the resistor, the OLED including an organic layerdisposed over the anode, and a cathode disposed over the organic layer,wherein the OLED is electrically connected to the source/drain of theheterojunction field effect thin film driver transistor through theresistor, and wherein the OLED is electrically connected to the sameground plane as the diode.
 9. The method as recited in claim 8, whereinthe transparent conductor includes a bilayer including a high resistancelayer formed using a dilution ratio of formation gases.
 10. The methodas recited in claim 8, wherein the transparent conductor is formed on aliner in the contact hole.
 11. The method as recited in claim 10,wherein the liner includes a vertical stack of materials.
 12. The methodas recited in claim 8, wherein the transparent conductor is formed witha lateral break and a bridge is formed in the lateral break to providethe resistor.
 13. The method as recited in claim 8, wherein theheterojunction field effect thin film switching transistor and theheterojunction field effect thin film driver transistor includehydrogenated silicon-based contacts.